<~).ml-(lon.auct oi , line. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2N5805 description ? collector-emitter sustaining voltage- : vceo(sus)= 300v(min) ? dc current gain- :hfe=10-100@lc=5a applications ? switching regulator ? inverters ? solenoid and relay drivers ? motor controls absolute maximum ratings(ta=25c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation@tc=25'c junction temperature storage temperature value 375 300 6 5 10 110 150 -65-200 unit v v v a a w 'c *c thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.6 unit 'c/w 3 2 * s pin 1.base 2, emitter 3. collector (cas e) 10-3 package -, t p-n ' ? i -4u ? ? u sw& ^tm" >s^. h3 cam 1 a b 2s c 5 d ( e 1 ij h k 1 l k n 1< q u 3i v i t ? 1 ? c -d 2 pl l-? f \ 4 ?4j c ./ 1 3 nun mm max 3900 .30 26.6? .30 8.30 1.90 1.10 .40 1 60 10.92 546 .10 13.50 375 1705 340 19.62 hoq.. 4_20_ o.oq 3020 43q 450 : b h3s - t ; b ? i nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon npn power transistor 2N5805 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat) vee(sat) icev iced iebo hfe ft parameter collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain current gain-bandwidth product conditions lc= 100ma; ib= 0 lc= 5a; ib= 0.5a lc= 5a; ib= 0.5a vce=375v;vbe(0ff)=-1.5v vce= 300v; ib= 0 veb= tv; lc= 0 . lc= 5a ; vce= 4v lc=1a;vce=10v min 300 10 15 max 2.0 2.0 12 10 1.0 100 unit v v v ma ma ma mhz
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